Chemical vapor deposition of sp<sup>2</sup>-boron nitride films on Al<sub>2</sub>O<sub>3</sub> (0001), (112¯0), (11¯02), and (101¯0) substrates
نویسندگان
چکیده
Thin films of boron nitride in its sp 2 -hybridized form (sp -BN) have potential uses UV devices and dielectrics. Here, we explore chemical vapor deposition (CVD) -BN on various cuts sapphire: Al O 3 [Formula: see text], (0001) using two CVD processes with different precursors triethylborane trimethylborane. Fourier transform infrared spectroscopy shows that grows all the sapphire substrates; x-ray diffraction, 2θ/ω diffractogram only text] rendered crystalline films: phi(ϕ)-scans, growth rhombohedral polytype (r-BN) these substrates is confirmed. These were found to be epitaxially grown an AlN interlayer comparatively higher quality for substrate, which determined omega(ω)-scans. Our study suggests most favorable substrate realize envisioned applications r-BN films.
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ژورنال
عنوان ژورنال: Journal of vacuum science & technology
سال: 2022
ISSN: ['2327-9877', '0734-211X']
DOI: https://doi.org/10.1116/6.0001672